Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
p diodesOshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi
no journal, ,
no abstracts in English
Pensl, G.*; Frank, T.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi
no journal, ,
no abstracts in English
interface by the first-principles molecular dynamics simulationMiyashita, Atsumi; Onuma, Toshiharu*; Yoshikawa, Masahito; Iwasawa, Misako*; Nakamura, Tomonori*; Tsuchida, Hidekazu*
no journal, ,
Silicon carbide (SiC) semiconductor devices are expected to be used under severe environments such as outer space and/or nuclear power plants. However, at this time, SiC devices don't present the predictable performance, since defects at interface reduce electric characteristics of them. The relation among atomic structures, interfacial defects and electric characteristics is not clear. Therefore, we tried to solve these problems by the computer simulation. The SiO
/SiC interface structure is generated and the electronic geometry is decided by the first-principle molecular dynamics (MD) simulation with the Earth-Simulator. The amorphous interface structure is made by heating and rapid quench calculation using 444 atoms model. The heating temperature is 4000K, the heating time is 3.0ps, and the speed of rapid quench is 
. After a rapid quench, the atomic structure became an almost perfect interfacial structure. However, a few defect energy levels were still observed in the band gap. The defect energy levels are originated from the localized electronic distribution of the interfacial oxygen.
thin films deposited on 4H-SiC(0001) substrates by capacitance-voltage methodYoshikawa, Masahito; Nakamura, Tomonori*; Miyashita, Atsumi; Onuma, Toshiharu*; Tsuchida, Hidekazu*
no journal, ,
no abstracts in English